features trenchfet power mosfet applications notebook - load switch - battery switch si4411dy vishay siliconix new product document number: 72149 s-03539?rev. b, 24-mar-03 www.vishay.com 1 p-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) - 30 0.010 @ v gs = - 10 v -13 - 30 0.0155 @ v gs = - 4.5 v -10 sd s d sd g d so-8 5 6 7 8 top view 2 3 4 1 s g d p-channel mosfet ordering information: si4411dy si4411dy-t1 (with tape and reel) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds -30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d -13 -9 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d - 10.5 - 7.5 a pulsed drain current i dm -50 a continuous source current (diode conduction) a i s - 2.7 - 1.36 maximum power dissipation a t a = 25 c p d 3.0 1.5 w maximum power dissipation a t a = 70 c p d 1.9 0.95 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 33 42 maximum junction-to-ambient a steady state r thja 70 85 c/w maximum junction-to-foot (drain) steady state r thjf 16 21 c/w notes a. surface mounted on 1? x 1? fr4 board.
si4411dy vishay siliconix new product www.vishay.com 2 document number: 72149 s-03539?rev. b, 24-mar-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v, t j = 70 c -10 a on-state drain current a i d(on) v ds = - 5 v, v gs = - 10 v -30 a drain source on state resistance a r ds( ) v gs = - 10 v, i d = - 13 a 0.008 0.010 drain-source on-state resistance a r ds(on) v gs = - 4.5 v, i d = - 10 a 0.0125 0.0155 forward transconductance a g fs v ds = - 15 v, i d = - 13 a 40 s diode forward voltage a v sd i s = - 2.7 a, v gs = 0 v - 0.74 - 1.1 v dynamic b total gate charge q g 43 65 gate-source charge q gs v ds = - 15 v, v gs = - 5 v, i d = - 13 a 8.5 nc gate-drain charge q gd 18.5 turn-on delay time t d(on) 18 30 rise time t r v dd = - 15 v, r l = 15 15 25 ns turn-off delay time t d(off) v dd = - 15 v , r l = 15 i d - 1 a, v gen = - 10 v, r g = 6 140 250 ns fall time t f 75 120 gate resistance r g 3.4 source-drain reverse recovery time t rr i f = - 2.1 a, di/dt = 100 a/ s 60 100 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 10 20 30 40 50 012345 v gs = 10 thru 4 v t c = 125 c -55 c 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 3 v
si4411dy vishay siliconix new product document number: 72149 s-03539?rev. b, 24-mar-03 www.vishay.com 3 typical characteristics (25 c unless noted) - on-resistance ( r ds(on) ) 0 1100 2200 3300 4400 5500 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0 1020304050 0.000 0.004 0.008 0.012 0.016 0.020 0 1020304050 v ds - drain-to-source voltage (v) c rss c oss c iss v ds = 15 v i d = 13 a i d - drain current (a) v gs = 10 v i d = 13 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 0.006 0.012 0.018 0.024 0.030 0246810 t j = 25 c i d = 13 a 50 10 0.1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s v gs = 4.5 v 1 t j = 150 c
si4411dy vishay siliconix new product www.vishay.com 4 document number: 72149 s-03539?rev. b, 24-mar-03 typical characteristics (25 c unless noted) 0 30 50 10 20 power (w) single pulse power time (sec) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 - 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 threshold v oltage variance (v) v gs(th) t j - temperature ( c) normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 70 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 1 600 10 40 0.1 0.01 100 safe operating area, junction-to-case v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 100 ms - drain current (a) i d 0.1 limited by r ds(on) t c = 25 c single pulse 1 s 10 s dc 10 ms 1 ms
si4411dy vishay siliconix new product document number: 72149 s-03539?rev. b, 24-mar-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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